[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

△ [22a-W541-2] Study on mechanism of contact resistance reduction on ohmic contacts with uneven AlGaN layers for AlGaN/GaN HEMTs

〇Yusuke Takei¹, Tomohiro Shimoda¹, Masayasu Takahashi¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol., 2.Toshiba)

Keywords:AlGaN,uneven structure,ohmic contact