The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

Tue. Mar 22, 2016 9:00 AM - 11:45 AM W541 (W5)

Seiji Nakamura(TMU)

11:00 AM - 11:15 AM

[22a-W541-8] Electrical Characterization of SiO2 / GaN Vertical MOS Capacitor treated by
High Pressure Water Vapor Annealing

Yuta Tominaga1, Ueno Katsunori2, Koji Yoshitsugu1, Tada Yuki1, Yasuaki Ishikawa1, Yukiharu Uraoka1 (1.NAIST, 2.Fuji Electric)

Keywords:GaN