The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

8 Plasma Electronics » 8.3 Deposition of thin film and surface treatment

[22a-W611-1~14] 8.3 Deposition of thin film and surface treatment

Tue. Mar 22, 2016 9:00 AM - 12:45 PM W611 (W6)

Jaeho Kim(AIST)

10:45 AM - 11:00 AM

[22a-W611-7] Effect of discharge tube material in nitriding of SiC surface using a remote nitrogen plasma

masaharu shimabayashi1, kazuaki kurihara2, koichi sasaki1 (1.Hokkaido Univ., 2.IMEC/Toshiba)

Keywords:SiC,remote nitrogen plasma

We previously reported that SiC surface irradiated by remote nitrogen plasma had a oxidized layer at the top surface. It is speculated that the exposure to air and/or the production of atomic oxygen from the quartz discharge tube are the cases of the oxidation. In this talk, we report the comparison between the SiC surfaces irradiated by remote nitrogen plasmas using quartz and p-BN tube as the discharge tube.