[22p-W541-1~8] 13.8 Compound and power electron devices and process technology

[22p-W541-3] Noise Performance of InGaAs/InAlAs HEMT in a 50 GHz band

〇Issei Watanabe¹, Akira Endoh^1,2, Takashi Mimura^1,2, Akifumi Kasamatsu¹ (1.NICT, 2.Fujitsu Lab. Ltd.)

Keywords:InGaAs,HEMT,Noise performance

We achieved a low minimum noise figure (NF_min) of 0.6 dB and an associated gain of 4.7 dB at 50 GHz for a 35-nm-gate In_0.7Ga_0.3As/In_0.52Al_0.48As HEMT when biased at a drain-source voltage of 0.4 V and a gate-source voltage of -0.2 V. This NF_min is one of the lowest values for InGaAs/InAlAs HEMTs ever reported in the 50 GHz band.