The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[22p-W541-1~8] 13.8 Compound and power electron devices and process technology

Tue. Mar 22, 2016 1:00 PM - 3:00 PM W541 (W5)

Naoteru Shigekawa(Osaka City Univ.)

1:45 PM - 2:00 PM

[22p-W541-4] Metal-subcollector InP/InGaAsSb DHBT with ft of over 500 GHz

〇Yuta Shiratori1, Takuya Hoshi1, Norihide Kashio2, Kenji Kurishima1, Eiji Higurashi3, Hideaki Matsuzaki1 (1.NTT Device Technology Labs., 2.NTT Device Innovation Center, 3.Univ. of Tokyo)

Keywords:Indium Phosphide,Heterojunction bipolar transistor,Wafer bonding