Operation of 16nm-InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Tue. Mar 22, 2016 1:00 PM - 3:00 PM W541 (W5)

Naoteru Shigekawa(Osaka City Univ.)

2:00 PM - 2:15 PM

〇haruki kinoshita¹, nobukazu kise¹, seiko netsu¹, toru kanazawa¹, yasuyuki miyamoto¹ (1.Tokyo Tech)

Keywords:High mobility channel,MOVPE,multi-gate