[22p-W541-1~8] 13.8 Compound and power electron devices and process technology

[22p-W541-6] Fabrication of Diamond Field Effect Transistors Using Double NO₂ Hole Doping

〇Makoto Kasu¹, Kazuya Harada¹, Yuta Koga¹, Kenji Hanada¹, Toshiyuki Oishi¹ (1.Saga Univ.)

Keywords:diamond,FET

We fabricated diamond field-effect transistors by using double NO2 hole doping method, which showed higher drain current.