[22p-W541-1~8] 13.8 Compound and power electron devices and process technology

[22p-W541-7] Effects of post-deposition anneal on SiO₂ layer on Ga₂O₃ (010)

〇Keita Konishi¹, Takafumi Kamimura¹, Man Hoi Wong¹, Kohei Sasaki^2,1, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

Keywords:gallium oxide,silicon oxide,post-deposition anneal