[22p-W541-1~8] 13.8 Compound and power electron devices and process technology

▲ [22p-W541-8] Field-Plated Ga₂O₃ MOSFETs With a Breakdown Voltage of Over 750 V

〇ManHoi Wong¹, Kohei Sasaki^2,1, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

Keywords:Ga2O3,MOSFET,field plate

This work presents the first demonstration of single-crystal Ga₂O₃ metal-oxide-semiconductor field effect transistors (MOSFETs) with a field plate (FP) for enhanced off-state breakdown voltage (V_br). A SiO₂ dielectric was used to serve a dual functionality for FP mechanical support as well as device passivation. The high resistivity of unintentionally-doped Ga₂O₃ grown by molecular beam epitaxy was harnessed for planar device isolation without mesa etching. The FP-MOSFETs exhibited a V_br of 755 V, a drain current on/off ratio of over 10⁹, and stable high temperature operation against 300°C thermal stress.