Keiichi Yamada

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 9:00 AM - 11:45 AM A203 (203)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[5a-A203-1~10] 15.6 Group IV Compound Semiconductors (SiC)

9:30 AM - 9:45 AM

[5a-A203-3] Evaluation of nitrogen depth profile at nitrided SiO₂/SiC interface using APT

〇Keiichi Yamada^1,2, Shinji Fujikake^1,3, Youhei Iwahashi¹, Shinsuke Harada¹, Hiroshi Yano⁴, Hajime Okumura¹ (1.AIST, 2.Toray Research Center, 3.Fuji Electric, 4.Univ. of Tsukuba)

Thu. Sep 7, 2017 9:00 AM - 11:00 AM A201 (201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[7a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

10:30 AM - 10:45 AM

[7a-A201-7] Evaluation of dopant concentration of SiC epitaxial film using Scanning Non-linear Dielectric Microscope

〇Keiichi Yamada^1,2, Yasuyuki Kawada^1,3, Shiyang Ji¹, Junji Senzaki¹, Ryouji Kosugi¹, Yoshiyuki Yonezawa¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.aist, 2.Toray Research Center, 3.Fuji electric)

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