Kohei Sasaki

→ Search for Kohei Sasaki in Google Scholar

Speaker, Author, Co-Author

Tue. Sep 5, 2017 9:30 AM - 12:15 PM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[5a-C17-1~10] 13.8 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

[5a-C17-3] Ultra-Low-Loss Ga₂O₃ Trench MOS-Type Schottky Barrier Diodes

〇Kohei Sasaki^1,2, Quang Tu Thieu¹, Daiki Wakimoto^1,2, Yuki Koishikawa^1,2, Akito Kuramata^1,2, Shigenobu Yamakoshi^1,2 (1.Novel Crystal Tech., 2.Tamura Corp.)

10:15 AM - 10:30 AM

[5a-C17-4] Ga₂O₃ JBS Diodes Using p-Type NiO

〇Kohei Sasaki^1,2, Quang Tu Thieu¹, Daiki Wakimoto^1,2, Yuki Koishikawa^1,2, Akito Kuramata^1,2, Shigenobu Yamakoshi^1,2 (1.Novel Crystal Tech., 2.Tamura Corp.)

▲