Taishi Yamamoto

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

2:15 PM - 2:30 PM

[5p-C17-3] Energy Band Diagram and Electronic Properties of Ga oxide/GaN Interface Formed by Remote O₂ Plasma

〇Taishi Yamamoto^1,2, Noriyuki Taoka², Akio Ohta¹, Truyen Nguyen Xuan^1,2, Hisashi Yamada², Tokio Takahashi², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mitsuaki Shimizu², Seiichi Miyazaki¹ (1.Nagoya Univ., 2.AIST GaN-OIL)