[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

[5p-C17-3] Energy Band Diagram and Electronic Properties of Ga oxide/GaN Interface Formed by Remote O₂ Plasma

〇Taishi Yamamoto^1,2, Noriyuki Taoka², Akio Ohta¹, Truyen Nguyen Xuan^1,2, Hisashi Yamada², Tokio Takahashi², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mitsuaki Shimizu², Seiichi Miyazaki¹ (1.Nagoya Univ., 2.AIST GaN-OIL)

Keywords:Energy band alignment