Oral presentation
13 Semiconductors » 13.8 Compound and power electron devices and process technology
Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)
Masashi Kato(NITech), Taketomo Sato(Hokkaido Univ.)
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1:45 PM - 2:00 PM
〇Shota Kaneki1, Kenya Nishiguchi1, Tamotsu Hashizume1 (1.Hokkaido Univ.)
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2:00 PM - 2:15 PM
〇TRUYEN XUAN NGUYEN1,2, Noriyuki Taoka2, Akio Ohta1, Hisashi Yamada2, Tokio Takahashi2, Mitsuhisa Ikeda1, Katsunori Makihara1, Mitsuaki Shimizu2, Seiichi Miyazaki1 (1.Nagoya University, 2.AIST GaN-OIL)
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2:15 PM - 2:30 PM
〇Taishi Yamamoto1,2, Noriyuki Taoka2, Akio Ohta1, Truyen Nguyen Xuan1,2, Hisashi Yamada2, Tokio Takahashi2, Mitsuhisa Ikeda1, Katsunori Makihara1, Mitsuaki Shimizu2, Seiichi Miyazaki1 (1.Nagoya Univ., 2.AIST GaN-OIL)
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2:30 PM - 2:45 PM
〇Tatsuya Oyobiki1, Kenya Nishiguchi1, Shinji Yamada2,3, Hideki Sakurai2,3, Ryuichiro Kamimura3, Yamato Osada3, Tetsu Kachi2, Tamotsu Hashizume1 (1.Hokudai Univ., 2.Nagoya Univ., 3.ULVAC)
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2:45 PM - 3:00 PM
〇Daiki Terashima1, Kenta Watanabe1, Takahiro Yamada1, Mikito Nozaki1, Hongan Shih2, Satoshi Nakazawa2, Yoshiharu Anda2, Tetsuzo Ueda2, Akitaka Yoshigoe3, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ., 2.Panasonic, 3.JAEA)
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3:00 PM - 3:15 PM
〇Yuto Ando1, Kentaro Nagamatsu2, Atsushi Tanaka2,3, Shigeyoshi Usami1, Ousmane 1 Barry3,1, Manato Deki2, Maki Kushimoto1, Shugo Nitta2, Yoshio Honda2, Hiroshi Amano2,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.NU VBL)
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3:15 PM - 3:30 PM
〇Masataka Maeda1, Tomoyoshi Mishima2, Kenji Shiojima1 (1.Univ. of Fukui, 2.Hosei Univ.)
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3:30 PM - 3:45 PM
〇Takuya Maeda1, Tetsuo Narita2,3, Masakazu Kanechika2, Tsutomu Uesugi2, Tetsu Kachi3, Tsunenobu Kimoto1, Masahiro Horita1, Jun Suda1,3,4 (1.Kyoto Univ., 2.TOYOTA Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)
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4:00 PM - 4:15 PM
〇Atsushi Hiraiwa1,2, Toshio Sasaki1, Satoshi Okubo3, Hiroshi Kawarada1,3,4 (1.Waseda Univ., RONL, 2.Nagoya Univ., IMaSS, 3.Waseda Univ., FSE, 4.Waseda Univ., KMLMST)
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4:15 PM - 4:30 PM
〇Noriyuki Taoka1, Takayuki Kobayashi2, Masayuki Nakamura2, Tatsuro Sagawa2, Nguyen Xuan Truyen1,3, Akio Ohta3, Hisashi Yamada1, Tokio Takahashi1, Mitsuhisa Ikeda3, Katsunori Makihara3, Toshiharu Kubo4, Toshikazu Yamada1, Takashi Egawa4, Seiichi Miyazaki3, Shin-ich Motoyama2, Mitsuaki Shimizu1 (1.AIST GaN-OIL, 2.Samco Inc., 3.Nagoya Univ., 4.Nagoya Inst. Tech.)
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4:30 PM - 4:45 PM
〇Mikito Nozaki1, Kenta Watanabe1, Takahiro Yamada1, Hongan Shih2, Satoshi Nakazawa2, Yoshiharu Anda2, Tetsuzo Ueda2, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ., 2.Panasonic)
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4:45 PM - 5:00 PM
〇Hiroyuki Ueda1, Tomohiko Mori1, Masato Kodama1, Yoshitaka Nagasato2, Hidemoto Tomita2, Kozo Kato2 (1.Toyota Central R&D Labs., 2.Toyota Motor Corp.)
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5:00 PM - 5:15 PM
〇Shinji Yamada1,2, Hideki Sakurai1,2, Masato Omori1, Yamato Osada2, Ryuichiro Kamimura2, Jun Suda1,3, Tetsu Kachi1 (1.Nagoya Univ. IMaSS, 2.ULVAC ISET, 3.Nagoya Univ.)
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5:15 PM - 5:30 PM
〇(PC)Takahiro Yamada1, Kenta Watanabe1, Mikito Nozaki1, Tokio Takahashi2, Hisashi Yamada2, Mitsuaki Shimizu2, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ., 2.AIST)
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5:30 PM - 5:45 PM
〇Masato Ohmori1, Shinji Yamada1,2, Hideki Sakurai1,2, Yamato Osada2, Ryuichiro Kamimura2, Tetsu Kachi1 (1.Nagoya Univ. IMaSS, 2.ULVAC ISET)
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5:45 PM - 6:00 PM
〇Kentarou Hayashi1, Hiroshi Ohta1, Fumimasa Horikiri2, Yoshinobu Narita2, Takehiro Yoshida2, Hajime Fujikura2, Kenji Shiojima3, Thoru Nakamura1, Tomoyoshi Mishima1 (1.Hosei Univ., 2.SCIOCS, 3.Fukui Univ.)
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6:00 PM - 6:15 PM
Hiroshi Ohta1, Kentaro Hayashi1, Fumimasa Horikiri2, Yoshinobu Narita2, Takehiro Yoshida2, Tohru Nakamura1, 〇Tomoyoshi Mishima1 (1.Hosei Univ., 2.SCIOCS)
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