Tomoaki Nishimura

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:00 AM - 11:30 AM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

9:45 AM - 10:00 AM

[6a-C17-3] Low contact resistance of Si-implanted GaN using Ti / Al electrode and analysis of electrode structure after annealing

〇Tomoaki Nishimura¹, Takeshi Kasai², Tomoyoshi Mishima¹, Kazuo Kuriyama¹, Tohru Nakamura¹ (1.Hosei Univ., 2.Chemitronics)