Naoshige Yokota

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:00 AM - 12:00 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

11:00 AM - 11:15 AM

[7a-S22-8] Change in electrical properties of Mg-ion implanted GaN by annealing

〇Naoshige Yokota¹, Kei Uetake¹, Masamichi Akazawa¹ (1.RCIQE-Hokkaido-Univ.)