Akihiro Matsuoka

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[7p-A301-1~20] 15.4 III-V-group nitride crystals

6:15 PM - 6:30 PM

[7p-A301-19] Fabrication of InGaN / GaN nanostructures by hydrogen atmosphere anisotropic thermal etching (HEATE) method with addition of ammonia gas

〇Akihiro Matsuoka¹, Yusuke Namae¹, Shun Ishijima¹, Kohei Ogawa¹, Yuki Ooe¹, Yusei Kawasaki¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

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