[7p-A301-1~20] 15.4 III-V-group nitride crystals

[7p-A301-19] Fabrication of InGaN / GaN nanostructures by hydrogen atmosphere anisotropic thermal etching (HEATE) method with addition of ammonia gas

〇Akihiro Matsuoka¹, Yusuke Namae¹, Shun Ishijima¹, Kohei Ogawa¹, Yuki Ooe¹, Yusei Kawasaki¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Keywords:semiconductor, LED, Nanostructure

The low damage processing technology of nitride semiconductors is expected to be applied to the fabrication of nanostructures which bring about high function and high performance of devices. We have proposed a hydrogen anisotropic thermal etching (HEATE) method utilizing thermal decomposition reaction of GaN and reported on formation of GaN nanostructure and fabrication of InGaN / GaN nano LED. In this paper, the effect of ammonia gas introduction on the etching shape of InGaN / GaN based device structure by HEATE method was investigated.