Yoshimi Yamashita

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

3:45 PM - 4:00 PM

[7p-S22-9] A study of gate metal structure for InAlN/AlN/GaN HEMTs

〇Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh¹, Akifumi Kasamatsu¹, Takashi Mimura¹ (1.NICT)