Shuichi Noda

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Speaker, Author, Co-Author

Fri. Sep 8, 2017 9:15 AM - 12:00 PM C21 (C21)

Oral presentation
| 13 Semiconductors
| 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[8a-C21-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

10:30 AM - 10:45 AM

[8a-C21-6] Investigation of Ge Etching Characteristics by HBr Neutral Beam

〇Shuichi Noda¹, Yosuke Tanimoto², Takuya Ozaki¹, Hideyuki Kurihara², Yasuyuki Hoshino², Kazuhiko Endo^1,3, Seiji Samukawa^1,2 (1.Tohoku Univ., 2.SHOWA DENKO, 3.AIST)

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