Oral presentation

22 Joint Session M » 22.1 Joint Session M "Phonon Engineering"

[7a-C22-1~12] 22.1 Joint Session M "Phonon Engineering"

Thu. Sep 7, 2017 9:00 AM - 12:45 PM C22 (C22)

Yoshiaki Nakamura(Osaka Univ.), Junichiro Shiomi(Univ. of Tokyo)

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9:00 AM - 9:15 AM

[7a-C22-1] Development of new group-IV alloys (Ge_1−xSn_x, Si_1−xSn_x) for thermoelectric materials

〇Masashi Kurosawa^1,2,3, Osamu Nakatsuka^1,4, Shigeaki Zaima⁴ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IAR, Nagoya Univ., 3.JST-PRESTO, 4.IMaSS, Nagoya Univ.)

9:15 AM - 9:30 AM

△ [7a-C22-2] Thermoelectric properties of p-type single-crystalline Ge₁₋_xSn_x layers grown by LT-MBE

〇Yukihiro Imai¹, Kouta Takahashi^1,2, Nakatsuka Osamu^1,3, Shigeaki Zaima³, Masashi Kurosawa^1,4,5 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS, 3.IMaSS, Nagoya Univ., 4.IAR, Nagoya Univ., 5.JST-PRESTO)

9:30 AM - 9:45 AM

[7a-C22-3] Thermoelectric properties of heavily doped p-/n-type poly-Ge₁₋_xSn_x layers prepared by pulsed laser annealing in water

〇Kouta Takahashi^1,2, Hiroshi Ikenoue³, Mitsuo Sakashita¹, Osamu Nakatsuka^1,4, Shigeaki Zaima⁴, Masashi Kurosawa^1,5,6 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS, 3.Dept. of Gigaphoton Next GLP, Grad. Sch. of ISEE, Kyushu Univ., 4.IMaSS, Nagoya Univ., 5.IAR, Nagoya Univ., 6.JST-PRESTO)

9:45 AM - 10:00 AM

△ [7a-C22-4] Performance Improvement of Si Nanowire Thermoelectric Generator by Terminating Interfacial Defects of SiO₂/Si

〇(D)Shuichiro Hashimoto¹, Shunsuke Oba¹, Yuya Himeda¹, Ryo Yamato¹, Takashi Matsukawa², Takeo Matsuki², Takanobu Watanabe¹ (1.Waseda Univ., 2.AiST)

10:00 AM - 10:15 AM

▲ [7a-C22-5] Enhancement of Thermoelectric Performance of Si Film by Al Ultrathin Layer Deposition

〇(M2C)Anthony Fracasso George¹, Ryoto Yanagisawa¹, Masahiro Nomura^1,2,3 (1.University of Tokyo, IIS, 2.Nanoquine, 3.JST PRESTO)

10:15 AM - 10:30 AM

[7a-C22-6] Theoretical analysis on thermoelectric properties of metal/semiconductor bilayer

〇Shin Yabuuchi¹, Yosuke Kurosaki¹, Jun Hayakawa¹ (1.Hitachi Ltd.)

10:30 AM - 10:45 AM

[7a-C22-7] The phonon scattering at the interface of Fe₂VAl/Heavy Metal Superlattice

〇(PC)Satoshi Hiroi^1,2, Seongho Choi², Shunsuke Nishino², Okkyun Seo¹, Tsunehiro Takeuchi² (1.NIMS, 2.Toyota Tech. Inst.)

11:00 AM - 11:30 AM

[7a-C22-8] [INVITED] Micro- and Nano-scale Heat Transfer in Liquid-Vapor Phase Change on Solid Surface

〇Takaharu Tsuruta¹ (1.Kyutech)

11:30 AM - 12:00 PM

[7a-C22-9] [INVITED] Control of Thermal Conductivity of Carbon Nanotube Sheets via Chemical and Physical Functionalization

〇Tsuyohiko Fujigaya^1,2,3, Yuki Nakashima¹, Wenxin Huang¹ (1.Kyushu Univ., 2.WPI-I2CNER, 3.JST-PRESTO)

12:00 PM - 12:15 PM

▼ [7a-C22-10] Semiconducting Single-walled Carbon Nanotubes Extracted by Flavin Compound for Thermoelectric Materials

〇(DC)Wenxin Huang¹, Yuki Nakashima¹, Tsuyohiko Fujigaya^1,2,3 (1.Kyushu Univ., 2.WPI-I2CNER, 3.JST-PRESTO)

12:15 PM - 12:30 PM

[7a-C22-11] Control of thermoelectric properties of single-wall carbon nanotubes by nanotubes junctions

〇Daisuke Hayashi¹, Yusuke Nakai¹, Haruka Kyakuno², Yasumitsu Miyata^1,3, Yutaka Maniwa¹ (1.Tokyo Metropolitan Univ., 2.Kanagawa University, 3.JST-CREST)

12:30 PM - 12:45 PM

△ [7a-C22-12] Film Thickness Dependence of In-Plane and Through-Plane Thermal Conductivity for Organic Thermoelectric Thin Films

〇Kazuya Okamoto¹, Hiroaki Anno¹ (1.Tokyo Univ. Sci., Yamaguchi)

Session information

[7a-C22-1~12] 22.1 Joint Session M "Phonon Engineering"

[7a-C22-1] Development of new group-IV alloys (Ge_1−xSn_x, Si_1−xSn_x) for thermoelectric materials

△ [7a-C22-2] Thermoelectric properties of p-type single-crystalline Ge₁₋_xSn_x layers grown by LT-MBE

[7a-C22-3] Thermoelectric properties of heavily doped p-/n-type poly-Ge₁₋_xSn_x layers prepared by pulsed laser annealing in water

△ [7a-C22-4] Performance Improvement of Si Nanowire Thermoelectric Generator by Terminating Interfacial Defects of SiO₂/Si

▲ [7a-C22-5] Enhancement of Thermoelectric Performance of Si Film by Al Ultrathin Layer Deposition

[7a-C22-6] Theoretical analysis on thermoelectric properties of metal/semiconductor bilayer

[7a-C22-7] The phonon scattering at the interface of Fe₂VAl/Heavy Metal Superlattice

[7a-C22-8] [INVITED] Micro- and Nano-scale Heat Transfer in Liquid-Vapor Phase Change on Solid Surface

[7a-C22-9] [INVITED] Control of Thermal Conductivity of Carbon Nanotube Sheets via Chemical and Physical Functionalization

▼ [7a-C22-10] Semiconducting Single-walled Carbon Nanotubes Extracted by Flavin Compound for Thermoelectric Materials

[7a-C22-11] Control of thermoelectric properties of single-wall carbon nanotubes by nanotubes junctions

△ [7a-C22-12] Film Thickness Dependence of In-Plane and Through-Plane Thermal Conductivity for Organic Thermoelectric Thin Films

Authentication

Session information

[7a-C22-1~12] 22.1 Joint Session M "Phonon Engineering"

[7a-C22-1] Development of new group-IV alloys (Ge1−xSnx, Si1−xSnx) for thermoelectric materials

△ [7a-C22-2] Thermoelectric properties of p-type single-crystalline Ge1−xSnx layers grown by LT-MBE

[7a-C22-3] Thermoelectric properties of heavily doped p-/n-type poly-Ge1−xSnx layers prepared by pulsed laser annealing in water

△ [7a-C22-4] Performance Improvement of Si Nanowire Thermoelectric Generator by Terminating Interfacial Defects of SiO2/Si

▲ [7a-C22-5] Enhancement of Thermoelectric Performance of Si Film by Al Ultrathin Layer Deposition

[7a-C22-6] Theoretical analysis on thermoelectric properties of metal/semiconductor bilayer

[7a-C22-7] The phonon scattering at the interface of Fe2VAl/Heavy Metal Superlattice

[7a-C22-8] [INVITED] Micro- and Nano-scale Heat Transfer in Liquid-Vapor Phase Change on Solid Surface

[7a-C22-9] [INVITED] Control of Thermal Conductivity of Carbon Nanotube Sheets via Chemical and Physical Functionalization

▼ [7a-C22-10] Semiconducting Single-walled Carbon Nanotubes Extracted by Flavin Compound for Thermoelectric Materials

[7a-C22-11] Control of thermoelectric properties of single-wall carbon nanotubes by nanotubes junctions

△ [7a-C22-12] Film Thickness Dependence of In-Plane and Through-Plane Thermal Conductivity for Organic Thermoelectric Thin Films

Authentication

[7a-C22-1] Development of new group-IV alloys (Ge_1−xSn_x, Si_1−xSn_x) for thermoelectric materials

△ [7a-C22-2] Thermoelectric properties of p-type single-crystalline Ge₁₋_xSn_x layers grown by LT-MBE

[7a-C22-3] Thermoelectric properties of heavily doped p-/n-type poly-Ge₁₋_xSn_x layers prepared by pulsed laser annealing in water

△ [7a-C22-4] Performance Improvement of Si Nanowire Thermoelectric Generator by Terminating Interfacial Defects of SiO₂/Si

[7a-C22-7] The phonon scattering at the interface of Fe₂VAl/Heavy Metal Superlattice