〇William Andrew Borders¹, Hisanao Akima¹, Shunsuke Fukami¹, Satoshi Moriya¹, Shouta Kurihara¹, Aleksandr Kurenkov¹, Yoshihiko Horio¹, Shigeo Sato¹, Hideo Ohno¹ (1.Tohoku Univ.)

〇Daiki Kato¹, Mikihiko Oogane¹, Kosuke Fujiwara¹, Junichi Jono², Masaaki Tsuchida², Yasuo Ando¹ (1.Tohoku Univ., 2.Konica Minolta Inc.)

〇Koichi Mizushima¹, Hayato Goto¹, Rie Sato¹ (1.Toshiba RDC)

Sai Krishna Narayananellore¹, Norihiro Matsuo^1,2, Naoki Doko^1,2, 〇Hidekazu Saito¹, Shinji Yuasa¹ (1.AIST, 2.Chiba Univ.)

〇Keisuke Masuda¹, Yoshio Miura^1,2 (1.NIMS, 2.KIT)

〇Takahiro Ogasawara¹, Mikihiko Oogane¹, Masakiyo Tsunoda¹, Yasuo Ando¹ (1.Tohoku Univ.)

〇Kazuya Suzuki¹, Reza Ranjbar¹, Lakhan Bainsla¹, Atsuo Ono¹, Yuta Sasaki^1,2, Jun Okabayashi³, Yoshio Miura⁴, Shigemi Mizukami¹ (1.Tohoku Univ., 2.Tohoku Univ. Appl., 3.Univ. Toyko, 4.Kyoto Inst. Tech.)

〇(D)Most Shahnaz Parvin, Miho Kubota, Mikihiko Oogane, Yasuo Ando

〇(M2)Junta Igarashi¹, Justin Llandro^1,2, Hideo Sato^1,2,3,4, Shunsuke Fukami^1,2,3,4, Hideo Ohno^1,2,3,4,5 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.CSRN, Tohoku Univ, 3.CSIS, Tohoku Univ., 4.CIES, Tohoku Univ., 5.WPI-AIMR, Tohoku Univ.)

〇Tazumi Nagasawa¹, Hirofumi Suto¹, Taro Kanao¹, MIchinaga Yamagishi¹, Koichi MIzushima¹ (1.Toshiba RDC)