[8a-A413-1~7] 10.3 Spin devices, magnetic memories and storages

▲ [8a-A413-1] Large Reduction of Fabrication Temperature for Fully Epitaxial Fe/GaO_x/Fe Magnetic Tunnel Junctions

Sai Krishna Narayananellore¹, Norihiro Matsuo^1,2, Naoki Doko^1,2, 〇Hidekazu Saito¹, Shinji Yuasa¹ (1.AIST, 2.Chiba Univ.)

Keywords:magnetic tunnel junction, gallium oxide

We have recently reported a high MR ratio up to 92% in fully epitaxial Fe(001)/GaO_x(001)/Fe(001) MTJs, where the GaO_x is one of the emerging semiconductors for practical applications. However, the formation temperature of the single-crystalline GaO_x is too high (~500ºC) to apply to practical applications. In this study, we developed a novel fabrication process that can largely reduce the formation temperature of the fully epitaxial MTJ from 500°C to 250°C.