The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[8a-A413-1~7] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3のコードシェアセッションあり

Fri. Sep 8, 2017 9:00 AM - 10:45 AM A413 (413)

Tomohiro Koyama(Univ. of Tokyo)

9:15 AM - 9:30 AM

[8a-A413-2] Theory for bias voltage effects on spin-dependent transport properties in Fe/MgAl2O4/Fe(001) junctions

Keisuke Masuda1, Yoshio Miura1,2 (1.NIMS, 2.KIT)

Keywords:magnetic tunneling junctions, bias voltage effects

In this work, we theoretically study bias voltage effects on tunneling magnetoresistive properties in Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs) by comparing them with those in typical Fe/MgO/Fe(001) MTJs. We calculated bias voltage dependences of magnetoresistance (MR) ratios in both the MTJs by using the density-functional theory and the nonequilibrium Green’ function method. We see that in both the MTJs, the MR ratio decreases as the bias voltage V increases and eventually vanishes at a critical value Vc. We also see that the MgAl2O4-based MTJ has a larger Vc than the MgO-based one. Since the in-plane lattice constant of Fe/MgAl2O4/Fe(001) is twice as that of Fe/MgO/Fe(001), the Fe electrodes in the MgAl2O4-based MTJ have an identical band structure to that obtained by folding the Fe band structure of the MgO-based MTJs. From detailed analyses of band-resolved transmittances, we clarified that the difference in Vc between the MgAl2O4- and MgO-based MTJs is attributed to such a band-folding effect.