[5a-A203-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[5a-A203-6] The Effect of Crystal Faces on the trap density in nitrided SiO₂/ SiC Interfaces Close to the Conduction Band Edge

〇Tetsuo Hatakeyama¹, Yuji kiuchi¹, Mitsuru Sometani¹, Dai Okamoto², Shinsuke Harada¹, Hiroshi Yano², Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.Tukuba Univ.)

Keywords:Interface traps, nitridation, MOSFET

The Effect of Crystal Faces on the trap density in nitrided SiO₂/ SiC Interfaces Close to the Conduction Band Edge was examined by the new characterization methods. The characterized results show that the effect of NO-POA on the reduction of the trap density is common to both Si-face and C-face. However, the D_it's and the Hall mobilities of fully nitrided SiO₂/ SiC interface are different between Si-face and C-face.