2:00 PM - 2:30 PM
[5p-A204-2] Some topics in the development of various IG-Si wafer products with intrinsic gettering ability
Keywords:CZ-Si crystal, intrinsic gettering, nitrogen dope
For about 35 years, I have engaged in the research and development for the defect behavior and control during CZ-Si crystal growth and for various wafer products. I introduce some topics which I experienced in my past work, such as defect removal effect by the annealing in hydrogen atmosphere which was obtained from improvement of the problems of DZ-IG and DZ-IG/EP wafers, and development of various IG-Si wafer products such as nitrogen / carbon dope IG-EP.