The 78th JSAP Autumn Meeting, 2017

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15 Crystal Engineering » 15.2 II-VI and related compounds

[5p-A411-1~13] 15.2 II-VI and related compounds

Tue. Sep 5, 2017 1:15 PM - 4:45 PM A411 (411)

Kazuyuki Uno(Wakayama Univ.), Ichirou Nomura(Sophia Univ.)

3:15 PM - 3:30 PM

[5p-A411-8] Growth of CdTe on (211) Si by vapor phase epitaxy using a metallic Cd source

〇Yuya Gokudan1, Kenji Iso1,2, Masumi Shiraishi1, Hisashi Murakami1, Akinori Koukitu1 (1.Tokyo Univ. of Agri. & Tech., 2.Mitsubishi Chemical Corp.)

Keywords:CdTe, vapor phase epitaxy