Oral presentation

[5p-A411-1~13] 15.2 II-VI and related compounds

Tue. Sep 5, 2017 1:15 PM - 4:45 PM A411 (411)

Kazuyuki Uno(Wakayama Univ.), Ichirou Nomura(Sophia Univ.)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

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1:15 PM - 1:30 PM

[5p-A411-1] [JSAP Young Scientist Award Speech] Epitaxial mechanism analysis of ZnTe layers on sapphire substrates by MBE

〇Taizo Nakasu¹, Masakazu Kobayashi^1,2, Toshiaki Asahi³ (1.Waseda Univ., 2.Waseda Univ. Lab. for Mat. Sci. & Tech., 3.JX Nippon Mining & Metals Corp.)

1:30 PM - 1:45 PM

[5p-A411-2] Improvement of crystallinity of ZnS epitaxial layer on sapphire substrate by mist-CVD

〇Koshi Okita¹, Hironobu Tanoue¹, Taiki Goto¹, Yudai Tanaka¹, Shoji Nagaoka^3,4, Zenji Yatabe², Yusui Nakamura^1,4 (1.Kumamoto Univ. GSST, 2.Kumamoto Univ. POIE, 3.Kumamoto IRI, 4.Phoenics)

1:45 PM - 2:00 PM

[5p-A411-3] Investigation of electrode materials for MgSe/ZnCdSe resonant tunneling diodes on InP substrates

〇Takumi Sakai¹, Yudai Momose¹, Katsumi Kishino¹, Ichirou Nomura¹ (1.Sophia Univ.)

2:00 PM - 2:15 PM

[5p-A411-4] Evaluation of the conduction band discontinuity of MgSe/ZnCdSe hetero junctions on InP substrates using n-i-n diodes

〇Yudai Momose¹, Takumi Sakai¹, Katsumi Kishino¹, Ichirou Nomura¹ (1.Sophia Univ.)

2:15 PM - 2:30 PM

[5p-A411-5] Investigation of the hole injection structure for
ZnCdSe/MgZnCdSe/MgZnSeTe visible optical devices on InP substrates

〇Ryosuke Amagasu¹, Kenta Ishii¹, Katsumi Kishino¹, Ichirou Nomura¹ (1.Sophia Univ.)

2:30 PM - 2:45 PM

[5p-A411-6] Development of Organic-Inorganic Hybrid Structure ZnSe Semiconductor Ultraviolet APD ~Improvement of Multiplication Factor~

〇Takuro Kawahara¹, Keita Tanaka¹, Kazuki Nakagawa¹, Yuki Ichikawa¹, Shigeto Uchida¹, Tomoki Abe¹, Hirofumi Kasada¹, Koshi Ando¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ.)

2:45 PM - 3:00 PM

△ [5p-A411-7] Study on growth of high quality MgZnO thin films and their characteristics of DUV light emission

〇Kyohei Ishii¹, Takeyoshi Onuma², Takayuki Uchida¹, Riena Jinno¹, Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ., 2.Kogakuin Univ.)

3:15 PM - 3:30 PM

[5p-A411-8] Growth of CdTe on (211) Si by vapor phase epitaxy using a metallic Cd source

〇Yuya Gokudan¹, Kenji Iso^1,2, Masumi Shiraishi¹, Hisashi Murakami¹, Akinori Koukitu¹ (1.Tokyo Univ. of Agri. & Tech., 2.Mitsubishi Chemical Corp.)

3:30 PM - 3:45 PM

[5p-A411-9] Deposition of CdZnTe films for radiation tolerant FEA image sensor

〇Tomoya Igari¹, Tamotsu Okamoto¹, Tomoaki Masuzawa², Yoichiro Neo², Hidenori Mimura² (1.NIT, Kisarazu Coll., 2.Shizuoka Univ.)

3:45 PM - 4:00 PM

[5p-A411-10] Effect of hydrogen partial pressure in carrier gas in processes for preparation of Cu-Zn-Sn precursor and for selenization on crystal structure and composition of Cu₂ZnSnSe₄ films

〇masato hirose¹, Masahiro Tahashi¹, Makoto Takahashi¹, Kenji Yoshino², Hideo Goto¹ (1.Chubu Univ., 2.Univ. of Miyazaki)

4:00 PM - 4:15 PM

[5p-A411-11] Selenization of Cu₂ZnSnS₄ Nanoparticle Layers and Effect of Supplying Sn Vapor

〇Kota Moriuchi¹, Shunya Taki¹, Aya Uruno¹, Masakazu Kobayashi^1,2 (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Waseda Univ. Kagami. Mem. Res. Inst. for Mat. Sci. & Tech.)

4:15 PM - 4:30 PM

[5p-A411-12] The Preparation of CuGaTe₂ Thin Films by Two-step Closed Space Sublimation

〇Yohei Sakurakawa¹, Aya Uruno¹, Masakazu Kobayashi^1,2 (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Kagami Mem. Res. Inst. for Mat. Sci. & Technol.)

4:30 PM - 4:45 PM

△ [5p-A411-13] Preparation of Te-based Chalcopyrite by Closed Space Sublimation and Effect of the Wettability

〇Aya Uruno¹, Yuhei Sakurakawa¹, Masakazu Kobayashi^1,2 (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Waseda Univ. Kagami Mem. Res. Inst. for Mat. Sci. & Technol.)

Poster presentation

[6p-PA6-1~6] 15.2 II-VI and related compounds

Wed. Sep 6, 2017 1:30 PM - 3:30 PM PA6 (P)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+Add all to schedule

1:30 PM - 3:30 PM

[6p-PA6-1] Growth of ZnS layer by UHV sputter epitaxy method (III)

〇Hidekazu Nagao¹, Reon Nagashima¹, Toshiya Kumei¹, Shota Nakamichi¹, A-i Mizuno¹, Ki Ando¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

1:30 PM - 3:30 PM

[6p-PA6-2] Growth of ZnS layer by UHV sputter epitaxy method (II)

〇Toshiya Kumei¹, Shota Nakamichi¹, Hidekazu Nagao¹, Reon Nagashima¹, A-i Mizuno¹, Ki Ando¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

1:30 PM - 3:30 PM

[6p-PA6-3] Numerical Modeling of ZnS and ZnSe growth by CVD method

〇Masaya Iizuka¹, Yuji Mukaiyama¹, Bogdanov M.V.², Bord O.V.² (1.STR Japan K.K., 2.STR Group, Inc. - Soft-Impact, Ltd.)

1:30 PM - 3:30 PM

[6p-PA6-4] Effect of heat treatment condition in precursor preparation and sulfurization processes
on crystal growth and composition of Cu₂ZnSnS₄ films

〇Yuuta Kajima¹, Hirose Masato¹, Masahiro Tahashi¹, Makoto Takahashi¹, Kenji Yoshino², Hideo Goto¹ (1.Chubu Univ, 2.Miyazaki Univ)

1:30 PM - 3:30 PM

▲ [6p-PA6-5] Growth and characterization of ZnCdO thin films by molecular beam epitaxy on MgO substrates for transparent conductive oxides

〇HyoChang Jang¹, Syohei Ushio¹, Shuji Tsutsumi¹, Tooru Tanaka¹, Katsuhiko Saito¹, Qixin Guo¹ (1.Saga Uni.)

1:30 PM - 3:30 PM

[6p-PA6-6] Fabrication and characterization of CuSbSe₂ thin films by selenization of metal precursors

〇Shunichi Tsuji¹, Yusuke Kato¹, Tooru Tanaka¹, Katsuhiko Saito¹, Qixin Guo¹ (1.Saga Univ.)

Sessions

15 Crystal Engineering » 15.2 II-VI and related compounds

[5p-A411-1~13] 15.2 II-VI and related compounds

[5p-A411-1] [JSAP Young Scientist Award Speech] Epitaxial mechanism analysis of ZnTe layers on sapphire substrates by MBE

[5p-A411-2] Improvement of crystallinity of ZnS epitaxial layer on sapphire substrate by mist-CVD

[5p-A411-3] Investigation of electrode materials for MgSe/ZnCdSe resonant tunneling diodes on InP substrates

[5p-A411-4] Evaluation of the conduction band discontinuity of MgSe/ZnCdSe hetero junctions on InP substrates using n-i-n diodes

[5p-A411-5] Investigation of the hole injection structure for
ZnCdSe/MgZnCdSe/MgZnSeTe visible optical devices on InP substrates

[5p-A411-6] Development of Organic-Inorganic Hybrid Structure ZnSe Semiconductor Ultraviolet APD ~Improvement of Multiplication Factor~

△ [5p-A411-7] Study on growth of high quality MgZnO thin films and their characteristics of DUV light emission

[5p-A411-8] Growth of CdTe on (211) Si by vapor phase epitaxy using a metallic Cd source

[5p-A411-9] Deposition of CdZnTe films for radiation tolerant FEA image sensor

[5p-A411-10] Effect of hydrogen partial pressure in carrier gas in processes for preparation of Cu-Zn-Sn precursor and for selenization on crystal structure and composition of Cu₂ZnSnSe₄ films

[5p-A411-11] Selenization of Cu₂ZnSnS₄ Nanoparticle Layers and Effect of Supplying Sn Vapor

[5p-A411-12] The Preparation of CuGaTe₂ Thin Films by Two-step Closed Space Sublimation

△ [5p-A411-13] Preparation of Te-based Chalcopyrite by Closed Space Sublimation and Effect of the Wettability

[6p-PA6-1~6] 15.2 II-VI and related compounds

[6p-PA6-1] Growth of ZnS layer by UHV sputter epitaxy method (III)

[6p-PA6-2] Growth of ZnS layer by UHV sputter epitaxy method (II)

[6p-PA6-3] Numerical Modeling of ZnS and ZnSe growth by CVD method

[6p-PA6-4] Effect of heat treatment condition in precursor preparation and sulfurization processes
on crystal growth and composition of Cu₂ZnSnS₄ films

▲ [6p-PA6-5] Growth and characterization of ZnCdO thin films by molecular beam epitaxy on MgO substrates for transparent conductive oxides

[6p-PA6-6] Fabrication and characterization of CuSbSe₂ thin films by selenization of metal precursors

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