The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[5p-C11-1~10] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Tue. Sep 5, 2017 1:45 PM - 4:30 PM C11 (Office 1)

Masao Inoue(Renesas), Takanobu Watanabe(Waseda Univ.)

3:30 PM - 3:45 PM

[5p-C11-7] Defect Profiling of RTN Traps under High Electric Fields ~ Theoretical Extrapolation Based on Non-radiative Multiphonon Transition ~

Michiru Hogyoku1, Takashi Izumida1, Seiji Onoue1 (1.Toshiba Memory Corp.)

Keywords:random telegraph noise, defect profiling, non-radiative multiphonon transition theory

By utilizing the non-radiative multiphonon transition theory, we have extrapolated behavior of RTN traps under high electric fields. We have found examples that RTN traps charged around threshold voltages emit carriers into the gate at high fields. This result seems to affect calculation of the carrier density under strong inversions or of the leakage current through gate insulators under high fields.