[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

[5p-C17-10] Relationships between Properties near Conduction Band Edge at Al₂O₃/GaN Interface and Annealing Temperatures

〇Noriyuki Taoka¹, Takayuki Kobayashi², Masayuki Nakamura², Tatsuro Sagawa², Nguyen Xuan Truyen^1,3, Akio Ohta³, Hisashi Yamada¹, Tokio Takahashi¹, Mitsuhisa Ikeda³, Katsunori Makihara³, Toshiharu Kubo⁴, Toshikazu Yamada¹, Takashi Egawa⁴, Seiichi Miyazaki³, Shin-ich Motoyama², Mitsuaki Shimizu¹ (1.AIST GaN-OIL, 2.Samco Inc., 3.Nagoya Univ., 4.Nagoya Inst. Tech.)

Keywords:GaN, Interface trap