[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

[5p-C17-17] 5 kV breakdown voltage GaN p-n diodes fabricated on free-standing GaN substrates

Hiroshi Ohta¹, Kentaro Hayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tohru Nakamura¹, 〇Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:semiconductor, GaN, diode

A high breakdown voltage of 5.0 kV has been achieved by applying our newly developed guard-ring structure to GaN p-n junction diodes fabricated on freestanding GaN substrates.