[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

△ [5p-C17-7] Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage

〇Masataka Maeda¹, Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

Keywords:Schottky contacts, Scanning internal photoemission microscopy, n-GaN

We applied the scanning internal photoemission microscopy to characterize degradation of n-GaN Schottky contacts under applying voltage. For the contacts without a large leakage current, uniform Y map was observed with no applied voltage, but Y increased by 5 to 25% in some portions of the contact under applying a voltage <-9V. However, the contacts with a large leakage current, in some small spots, Y significantly increased when a voltage of -36V was applied. We conformed that SIPM is a powerful tool to characterize an initial stage of degradation by voltage application.