[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

△ [5p-C17-6] Silicon doped thick epi-layer GaN SBD on different miscut m-plane substrates

〇Yuto Ando¹, Kentaro Nagamatsu², Atsushi Tanaka^2,3, Shigeyoshi Usami¹, Ousmane 1 Barry^3,1, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.NU VBL)

Keywords:GaN, m-plane, miscut

Gallium nitride (GaN) has been investigated extensively in recent decades as a promising alternative to silicon for high-temperature and high-power electronics applications because of its remarkable properties. m-plane GaN become usually high-doped n-type because of unintensionally doped oxygen. And it can be reduced by using miscut substrate. In this report we fabricate SBD with thick lightly doped n-type epi-layer on various miscut m-plane substrate.