Continuous MOVPE growth of GeSn and GaAs layers on GaAs substrate

Yuki Fujiwara; Kakeru Takahashi; Takeshi Fujisawa; Kouji Maeda; Masakazu Arai

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 5, 2017 1:45 PM - 5:15 PM C21 (C21)

Manabu Mitsuhara(NTT), Kouichi Akahane(NICT)

3:45 PM - 4:00 PM

[5p-C21-8] Continuous MOVPE growth of GeSn and GaAs layers on GaAs substrate

〇(M1)Yuki Fujiwara¹, Kakeru Takahashi¹, Takeshi Fujisawa², Kouji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki, 2.Hokkaido Univ.)

Keywords:MOVPE, Mid Infrared, semiconductor laser

GeSn layer and GaAs buffer layer were continuously grown on GaAs substrate by MOVPE method in the same reactor. Evaluation method was performed by using SIMS, and continuous growth of GeSn and GaAs with Sn composition of 0.36% could be confirmed.