[5p-PB3-1~26] 16.3 Bulk, thin-film and other silicon-based solar cells

[5p-PB3-17] Efficient hole blocking capability of Mg(OH)₂ for n-Si/PEDOT:PSS junction solar cells

〇Koji Kasahara¹, A.T.M Saiful Islam¹, Jaker Hossain¹, Daisuke Harada¹, Kouki Kawamura¹, Ryo Ishikawa¹, Hajime Shirai¹ (1.Saitama Univ.)

Keywords:Si solar cells

We demonstrate the potential of barium hydroxide Mg(OH)₂ as a hole blocking layer on the photovoltaic performance of front- and back-organic/n-type crystalline silicon (n-Si) heterojunction solar cells with poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS). Power conversion efficiency (PCE) of front-PEDOT:PSS/n-Si heterojunction solar cell device increased with a 2-nm-thick Mg(OH)₂ interlayer at rear n-Si and aluminum (Al) cathode interface due to the enhanced hole blocking capability as well as enhance electron injection level to Al cathode in the infrared region.