[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[6a-A201-3] Electrical characteristics of W/SiO₂/nSiC-MOS capacitor with post metallization annealing

〇Iimin Rei¹, Takashi Kaneko¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Hiroshi Iwai², Kuniyuki Kakushima¹, Masayuki Huruhashi³, Shingo Tomohisha³, Satoshi Yamakawa³ (1.Tokyo Tech.FRC, 2.Tokyo Tech. IIR, 3.Mitsubishi Electric Corp)

Keywords:SiC, TDMAS, PMA