[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)

△ [6a-A201-5] Self-aligned 4H-SiC nMOSFETs for harsh environment electronics

〇(M2)Tatsuya Kurose¹, Shin-Ichiro Kuroki¹, Seiji Ishikawa^2,1, Tomonori Maeda^2,1, Hiroshi Sezaki^2,1, Takahiro Makino³, Ohshima Takeshi³, Mikael Ostling⁴, Carl-Mikael Zetterling⁴ (1.Hiroshima Univ. RNBS, 2.Phenitec Co.,Ltd, 3.QST, 4.KTH Royal Institute of technology)

Keywords:SiC, Self-aligned process, MOSFET