[6a-A301-1~11] 15.4 III-V-group nitride crystals

△ [6a-A301-8] Evaluation of Threading Dislocation Densities in HVPE-Grown AlN Substrates by Wet Chemical Etching

〇Mari Higuchi¹, Taro Mitsui¹, Toru Nagashima², Reo Yamamoto^1,2, Keita Konishi¹, Galia Pozina³, Rafael Dalmau⁴, Raoul Schlesser⁴, Ramon Collazo⁵, Bo Monemar^3,6, Zlatko Sitar⁵, Yoshinao Kumagai^1,6 (1.TUAT, 2.Tokuyama Corp., 3.Linkoping Univ., 4.HexaTech, Inc., 5.NC State Univ., 6.TUAT GIR)

Keywords:HVPE, AlN, etch pit