[6a-A301-1~11] 15.4 III-V-group nitride crystals

[6a-A301-9] Origin of inversion domains in aluminum nitride grown by sublimation method

〇Keisuke Shigetoh¹, Kayo Horibuchi¹, Daisuke Nakamura¹ (1.Toyota CRDL)

Keywords:Nitride semiconductor, polarity inversion, impurity segregation

To reveal the origin of the polarity inversion of AlN in sublimation method, homoepitaxially-grown crystal that shows polarity inversion is investigated. 3DAP tomography shows the segregation of the oxygen impurities (3 atom%) at the inversion domain boundary. We conclude that oxygen impurity incorporation is the origin of polarity inversion during the sublimation growth of AlN.