[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

[6a-A503-2] Characteristic of Molecular Ion Implanted Epitaxial Wafer (1)
-Desorption and Adsorption Behavior Kinetic of Hydrogen in Projection Range-

〇Ryosuke Okuyama¹, Ayumi Masada¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:Molecular ion, Hydrogen

The association and dissociation behavior of hydrogen in the projection range of a CH₃O-cluster was investigated for high-performance complementary metal-oxide-semiconductor (CMOS) image sensors. The two hydrogen peaks of the CH₃O-cluster were observed after epitaxial growth and heat treatment. The difference in the two peaks’ depth accords with the difference in the depth of a formed conventional carbon-cluster defect and new extended stacking fault defect. Understanding the properties of the hydrogen behavior in the projection range of CH₃O-cluster ion implantation is important to both applied and fundamental material science. Therefore, the hydrogen in the CH₃O-cluster projection range is considered to contribute to the CMOS image sensor fabrication process to achieve high electrical characteristics.