[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

[6a-A503-3] Characteristic of Molecular Cluster Ion Implanted Epitaxial Silicon Wafer (2)
- Gettering Heavy Metal of Room Temperature Bonding Wafer -

〇Yoshihiro Koga¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Satoshi Shigematsu¹, Ryo Hirose¹, Ayumi Masada¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:epitaxial silicon wafer, room templature bonding, heveay metal gettering

We have been studying new epitaxial silicon wafer that epitaxial silicon layer bonded on carbon-cluster ion implanted silicon substrate at room temperature for improvement of CMOS imager devices performance.
In this studying, we demonstrate that how much this wafer can getter heavy metal.