The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Sep 6, 2017 9:00 AM - 12:30 PM A503 (503)

Yuta Nagai(GlobalWafers Japan), Shotaro Takeuchi(Ohsaka Univ.)

9:45 AM - 10:00 AM

[6a-A503-4] Characteristic of Molecular Ion Implanted Epitaxial Wafer (3)
-Analysis of Gettering Behavior of Double Epitaxial Wafer-

HIDEHIKO OKUDA1, AYUMI MASADA1, SATOSHI SHIGEMATSU1, RYOU HIROSE1, TAKESHI KADONO1, RYOUSUKE OKUYAMA1, YOSHIHIRO KOGA1, KAZUNARI KURITA1 (1.SUMCO)

Keywords:low oxygen substrate, carbon-cluster ion implantation, gettering behavior

We reported that carbon-cluster ion implantation into a low oxygen substrate such as an epitaxial layer enhances the gettering capability of iron at Autumn Japan Society of Applied Physics in 2016. However, the gettering behavior of metal impurities excluding iron has not been clarified.
In this study, it will be reported that the analysis of the gettering behavior of various metal impurities by implanting clusters into the epitaxial layer with low oxygen concentration in the Si substrate.