[6a-C21-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6a-C21-5] Fabrication of Hollow Structures Using Atomic layer Deposition

〇Tatsurou Sagawa¹, Nakamura Masayuki¹, Kobayashi Takayuki¹, Tatsuta Toshiaki¹, Motoyama Shin-ich¹ (1.Samco Inc)

Keywords:Atomic layer deposition, Micro Electro Mechanical Systems, Aluminium oxide

Some MEMS devices have structures with air gaps (hollow structures).Fabricataion of hollow structure in general uses wet etching to remove a poly-Si sacrificial layer. However, this method is unsuitable for hollow structures that are entirely covered by other films.This is because it becomes necessary to etch non-sacrificial layers, which leads to increased costs, device damage and liquid waste.In this presentation, we report a new, low-cost hollow structure fabrication method using ALD.