The 78th JSAP Autumn Meeting, 2017

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6a-C21-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Wed. Sep 6, 2017 9:15 AM - 12:15 PM C21 (C21)

Kazuyoshi Ueno(Shibaura Inst. of Tech), Masahide Goto(NHK)

10:00 AM - 10:15 AM

[6a-C21-4] Rate theory of SiCxNyOz thin film formation at room temperature by PECVD

〇Toru Watanabe1, Mai Hong Minh1, Hitoshi Habuka1 (1.Yokohama Nat. Univ.)

Keywords:Plasma enhanced CVD, SiCNO, Deposition mechanism

The rate theory for forming the SiCNO film by the non-heat assistance plasma enhanced CVD was evaluated. Particularly, the relationship between the growth rate and the precursor consumption will be discussed.