[6a-PA8-1~4] 7.5 Ion beams

[6a-PA8-3] Low-Energy Organic Silicon Molecular Ion Beam Production for SiC Film Formation

〇Satoru Yoshimura¹, Satoshi Sugimoto¹, Takae Takeuchi³, Masato Kiuchi^1,2 (1.Osaka Univ., 2.AIST, 3.Nara Women Univ.)

Keywords:Hexamethyldisilane, Hexamethyldisiloxane

Low-energy ion beam deposition is a powerful technique for the film coating on substrates. Hexamethyldisilane (HMDS) and Hexamethyldisiloxane (HMDSO) have been employed for the deposition of SiC and SiO films. We proposed a methodology for SiC or SiO formation with the ion beam deposition with HMDS or HMDSO. We obtained SiCH4⁺ or SiO⁺ ion beams by the mass-selection from HMDS or HMDSO, and then irradiated these ions to substrates. After the completion of experiment, we discovered SiC or SiO films deposited on the substrate.