[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

△ [6p-A201-15] Structure of porous SiC produced by voltage controlled anodic oxidation

〇Hiroaki Kurokawa¹, Yoshimi Iwasa¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

Keywords:semiconductor, porous SiC

Porous SiC produced from B-N co-doped SiC(fluorescent SiC) can emit highly efficient blue light and realization of a light source with high color rendering property is expected by combining with bulk fluorescent SiC. However, since the reproducibility of the fine structure of the porous SiC is low, there was a problem with the controllability of the emission spectrum. In this study, the relationship between applied voltage and porous structure in anodic oxidation method was investigated.