1:40 PM - 2:10 PM
[6p-A301-3] Importance of Point Defect Control for GaN Vertical Power Devices
Keywords:GaN, power devices, point defects
本講演では、エピ、イオン注入を中心GaN縦型パワーデバイス実現に向けた点欠陥の研究状況、今後取り組むべき課題について述べる。
Symposium (Oral)
Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~
Wed. Sep 6, 2017 1:00 PM - 4:30 PM A301 (Main Hall)
Tamotsu Hashizume(Hokkaido Univ.)
1:40 PM - 2:10 PM
Keywords:GaN, power devices, point defects