Symposium (Oral)

[6p-A301-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

Wed. Sep 6, 2017 1:00 PM - 4:30 PM A301 (Main Hall)

Tamotsu Hashizume(Hokkaido Univ.)

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1:00 PM - 1:10 PM

[6p-A301-1] Introductory Talk

〇Hiroshi Fujioka¹ (1.The Univ. of Tokyo)

1:10 PM - 1:40 PM

[6p-A301-2] Recent progress in the ammonothermal growth of GaN crystals for power devices using acidic mineralizers

〇Shigefusa Chichibu¹, Makoto Saito^1,2, Quanxi Bao^1,3, Kohei Kurimoto³, Daisuke Tomida¹, Kohei Shima¹, Kazunobu Kojima¹, Yuji Kagamitani², Rinzo Kayano³, Tohru Ishiguro¹ (1.IMRAM, Tohoku Univ., 2.Mitsubishi Chem Corp, 3.Japan Steel Works)

1:40 PM - 2:10 PM

[6p-A301-3] Importance of Point Defect Control for GaN Vertical Power Devices

〇Jun Suda^1,2,3, Masahiro Horita³ (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Kyoto Univ.)

2:10 PM - 2:40 PM

[6p-A301-4] HVPE growth of high-purity GaN epitaxial layers

〇Hajime Fujikura¹, Taichiro Konno¹, Takehiro Yoshida¹, Fumimasa Horikiri¹ (1.SCIOCS)

3:00 PM - 3:30 PM

[6p-A301-5] N-polar GaN Growth and its Evolution to Transistors

〇Takashi Matsuoka¹ (1.IMR, Tohoku Univ.)

3:30 PM - 4:00 PM

[6p-A301-6] Electron-phonon interaction and crystal quality of III-nitride semiconductors

〇Yoshihiro Ishitani¹, Bei Ma¹, Kensuke Oki¹, Hironori Sakamoto¹, Ken Morita¹ (1.Chiba Univ.)

4:00 PM - 4:30 PM

[6p-A301-7] MOVPE growth of InAlN HEMT structures and suppression of gate leakage current
based on the control of internal electric field

〇Junji Kotani¹, Atsushi Yamada¹, Norikazu Nakamura¹ (1.Fujitsu Ltd.)

Sessions

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-1] Introductory Talk

[6p-A301-2] Recent progress in the ammonothermal growth of GaN crystals for power devices using acidic mineralizers

[6p-A301-3] Importance of Point Defect Control for GaN Vertical Power Devices

[6p-A301-4] HVPE growth of high-purity GaN epitaxial layers

[6p-A301-5] N-polar GaN Growth and its Evolution to Transistors

[6p-A301-6] Electron-phonon interaction and crystal quality of III-nitride semiconductors

[6p-A301-7] MOVPE growth of InAlN HEMT structures and suppression of gate leakage current
based on the control of internal electric field

Authentication

Sessions

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-1] Introductory Talk

[6p-A301-2] Recent progress in the ammonothermal growth of GaN crystals for power devices using acidic mineralizers

[6p-A301-3] Importance of Point Defect Control for GaN Vertical Power Devices

[6p-A301-4] HVPE growth of high-purity GaN epitaxial layers

[6p-A301-5] N-polar GaN Growth and its Evolution to Transistors

[6p-A301-6] Electron-phonon interaction and crystal quality of III-nitride semiconductors

[6p-A301-7] MOVPE growth of InAlN HEMT structures and suppression of gate leakage currentbased on the control of internal electric field

Authentication

[6p-A301-7] MOVPE growth of InAlN HEMT structures and suppression of gate leakage current
based on the control of internal electric field