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[6p-A301-4] HVPE growth of high-purity GaN epitaxial layers
Keywords:GaN, HVPE, high-purity
Highly-pure GaN epitaxial layers were successfully grown by a quart-free HVPE system. All impurity concentrations measured by SIMS (Si, O, C, H, Fe, Cr, Ni, Ti etc.) were below the detection limit. The high-purity layers displayed an insulating nature in the absence of a dopant; by Si doping, the electron concentration could be controlled over a wide range, down to 1x1015/cm3.