[6p-A301-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-5] N-polar GaN Growth and its Evolution to Transistors

〇Takashi Matsuoka¹ (1.IMR, Tohoku Univ.)

Keywords:Nitride Semiconductor, Polarity, HEMT